The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Aug. 07, 1995
Applicant:
Inventors:
Kumar Shiralagi, Chandler, AZ (US);
Raymond K Tsui, Phoenix, AZ (US);
Herbert Goronkin, Tempe, AZ (US);
Assignee:
Motorola, Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437103 ; 437107 ; 437126 ; 437129 ; 437133 ; 117913 ; 117923 ;
Abstract
A method of fabricating semiconductor devices including defining an area on the surface of a substrate, selectively growing, on the area, a crystalline material with at least one defined crystallographic facet, and selectively growing a semiconductor device on the crystallographic facet. In a second embodiment, an area is defined on the surface of a substrate and chemical beam epitaxy is used to selectively grow, on the area, a layer of indium arsenide with at least one defined crystallographic facet.