The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Jul. 12, 1995
Yaw-Hwang Chen, Ft. Collins, CO (US);
Hewlett-Packard Co., Palo Alto, CA (US);
Abstract
This invention pertains to a lateral bipolar transistor comprising an emitter, a base and a collector. The transistor exhibits improved function and overall size reduction, due to the base and emitter structure. An island forms both the base and emitter regions in the transistor structure with the base region being above the collector region, below the emitter region, and surrounded by a dielectric region. The emitter is surrounded by emitter isolation walls, which are formed approximately 0.2 microns above the plane of the dielectric region, such that any manufacturing variances will not cause the emitter isolation walls to contact the dielectric region and pinch-off the base region from the base junction region. This structure also allows the size of the base-emitter junction to be decreased without increasing the parasitic characteristics of the transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile