The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Apr. 17, 1995
Yong K Choi, Seoul, KR;
Young J Song, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A halftone phase shift mask and a method for forming a halftone phase shift mask. The method includes: forming a halftone pattern material layer on a substrate; defining positions for forming more than one open region of a desired pattern and defining positions for forming one or more dummy open regions that can offset respective new side lobes having a high intensity formed by overlap of side lobes of light irradiated onto the substrate as well as the halftone material layer; and forming the patterned open regions and dummy open regions that can offset respective new side lobes at the defined positions on the halftone pattern material layer by subjecting the halftone pattern material layer to patterning.