The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 1997

Filed:

Apr. 21, 1995
Applicant:
Inventors:

Howard P Groger, Gainesville, FL (US);

Peter Lo, Blacksburg, VA (US);

Martin Weiss, New Port Richey, FL (US);

Peter Zory, Gainesville, FL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
422 8205 ; 422 8208 ; 422 8211 ; 356318 ;
Abstract

A chemical sensor uses a semiconductor diode laser having a surface active region. A laser structure, including an active layer, a cladding layer, a barrier layer and a grating layer, is constructed on a substrate. A contact layer is deposited on a surface of the laser structure. One or more electrodes are positioned on the contact layer. A segmented electrode has a first contact pad, a second contact pad, and a surface active region between the first and second pads. A surface active region is created between the two electrodes. The tail of the lasing signal interacts with surface features of the diode laser or with chemical materials or probes in contact with the surface of the diode laser or in contact with coatings on the surface of the diode laser. Chemical changes in the ambient environment induce changes in the laser signal. The modified laser signal output is detected by a detector region integral with or separated from the laser structure. The laser diode sensor has applications in fields involving chemical sensing and identification, including automotive, environmental and medical fields.


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