The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1996
Filed:
Jun. 01, 1995
Applicant:
Inventors:
Ali Iranmanesh, Sunnyvale, CA (US);
John M Pierce, Palo Alto, CA (US);
Albert M Bergemont, Santa Clara, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 43 ; 437 48 ; 437 52 ; 437195 ;
Abstract
A series of self-aligned, intermediate strips of conductive material, which contact each of the drain regions in a corresponding number of columns of drain regions in a flash electrically programmable read-only-memory (EPROM), are formed as a thick layer of planarized polysilicon. By utilizing intermediate strips of conductive material which are formed from a thick layer of polysilicon, the formation of cracks or voids in the intermediate strips of conductive material can be eliminated.