The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 1996

Filed:

Nov. 08, 1994
Applicant:
Inventors:

Klaus Robinson, Woodland Hills, CA (US);

Hugh L Garvin, Malibu, CA (US);

Assignee:

Hughes Aircraft Company, Los Angeles, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419234 ; 20419226 ; 20419227 ; 2041923 ; 427162 ; 427164 ; 216 24 ;
Abstract

A system and method for fabricating optical ramp filters utilizes an ion beam sputter etching system and a shaped aperture mask to produce optical ramp filters with precise control over the transmission and reflectance properties of the filter. The ion beam is passed through a shaped aperture whose width varies as a function of its length. The resultant shaped ion beam is used to etch a uniform reflective layer that was previously deposited on a transparent substrate. The substrate and the reflective layer are translated relative to the shaped aperture so that the shaped ion beam 'travels' across the reflective layer. Different parts of the reflective layer are exposed to the ion beam for different amounts of time as a result of the varying width of the shaped ion beam. The result is a reflective layer with a nonuniform depth profile (a ramp filter). The method allows control of the layer thickness with a precision of less than 0.5 nm. This precision exceeds that achieved with prior fabrication methods that control the thickness of the layer during the deposition (or growth) stage.


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