The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1996
Filed:
Feb. 13, 1995
James Torok, Minneapolis, MN (US);
Richard Spitzer, Berkeley, CA (US);
Integrated Microtransducer Electronics Corporation, Berkeley, CA (US);
Abstract
A memory cell including a storage element having a first structure with a plurality of layers, selected layers having magnetization vectors associated therewith, the first structure exhibiting giant magnetoresistance, wherein the storage element has a closed flux structure in at least one dimension, and wherein the magnetization vectors are confined to the at least one dimension during all stages of operation of the storage element. The memory cell includes a means for reading information from and writing information to the first structure and a selection conductor for applying one or more selection signals to the storage element to enable reading from and writing to the first structure. In one embodiment, the reading and writing means includes a read conductor electrically coupled to the first structure, and a write conductor electrically isolated from the read conductor and the first structure. In a second embodiment, the reading and writing means is a single conductor electrically coupled to the first structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile