The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1996
Filed:
Jun. 22, 1994
Applicant:
Inventors:
Wayne A Anderson, Hamburg, NY (US);
Quanxi Jia, Los Alamos, NM (US);
Junsin Yi, Amherst, NY (US);
Lin-Huang Chang, Tonawanda, NY (US);
Assignee:
Research Foundation of State University of New York, Albany, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
361313 ; 3613215 ; 29 2542 ; 427 79 ;
Abstract
The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.