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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5587870 B1

PDFFull Text
Date of Patent:
Dec. 24, 1996

Filed:

Jun. 22, 1994

Nanocrystalline layer thin film capacitors

Applicant:
Inventors:

Wayne A Anderson, Hamburg, NY (US);

Quanxi Jia, Los Alamos, NM (US);

Junsin Yi, Amherst, NY (US);

Lin-Huang Chang, Tonawanda, NY (US);

Assignee:

Research Foundation of State University of New York, Albany, NY (US);

Attorney:

Crossetta & Associates

Primary Examiner:

Teresa J Walberg

Assistant Examiner:

Gregory L Mills

Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
361313 ; 3613215 ; 29 2542 ; 427 79 ;
Abstract

The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.

Find Patent Forward Citations

Anderson, Wayne. (1996). Nanocrystalline layer thin film capacitors (U.S. Patent No. 5587870). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5587870

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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