The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1996
Filed:
Mar. 23, 1995
Applicant:
Inventors:
Masanori Murakami, Tsuzuki-gun, JP;
Yasuo Koide, Kyoto, JP;
Nobuaki Teraguchi, Nara, JP;
Yoshitaka Tomomura, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257744 ; 257 78 ; 257 99 ; 257741 ; 257761 ; 257762 ; 257763 ; 257766 ; 257769 ; 257770 ;
Abstract
A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.
Murakami, Masanori. (1996). Ii-vi group compound semiconductor device metallic nitride ohmic contact (U.S. Patent No. 5587609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5587609
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile