Semiconductor component having gate-turn-off thyristor and reduced

Abstract

To provide thermal relief, particularly of the edge of disk-shaped gate-turn-off GTO thyristors (GTO) as are used in converters in power electronics, at least one cooling segment which is isolated from a GTO cathode metallization of the GTO thyristor segment (GTO) by a gate electrode metallization of a gate electrode is arranged on the edge and laterally adjacent to the GTO thyristor segment (GTO). An insulation layer is provided between a cooling segment metallization and the gate electrode metallization. Cooling segments in an lo outer annular zone can be alternately arranged with GTO thyristor segments (GTO) or offset towards the outside in the radial direction or perpendicular direction thereto. Instead of cooling segments, a p.sup.+ -type GTO emitter layer of the GTO thyristor segments (GTO) can be shortened at the edge in the outer annular zone. The edge side of these GTO thyristor segments (GTO) can exhibit a shorter charge carrier life than the remaining semiconductor body due to irradiation with electrons, protons or .alpha.-particles, which results in a lower operating current in this area. An ohmic impedance can be connected in series with a diode between a gate electrode and a cathode of the GTO thyristor (GTO) for stabilizing the trigger threshold and reducing its temperature dependence.