The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1996
Filed:
Apr. 19, 1995
Applicant:
Inventors:
Norikatsu Koide, Aichi-ken, JP;
Shiro Yamazaki, Aichi-ken, JP;
Junichi Umezaki, Aichi-ken, JP;
Shinya Asami, Aichi-ken, JP;
Assignees:
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Research Development Corporation of Japan, Saitama-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 94 ; 257 96 ; 257 97 ; 257103 ; 257627 ; 257628 ;
Abstract
A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis 'a' <1120>, and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.