The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 1996

Filed:

Jun. 07, 1995
Applicant:
Inventors:

Graeme M Wyborn, Walton-on-Thames, GB;

Howard C Nicholls, Penylan, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437195 ; 437192 ; 437194 ;
Abstract

A method of fabricating a semiconductor device incorporating a via and an interconnect layer of aluminium or aluminium alloy. The invention provides a semiconductor device including a via and an interconnect layer of aluminium or aluminium alloy, a capping layer of electrically conductive material which has been formed over the interconnect layer and an electrically conductive contact which has been selectively deposited on the capping layer thereby to form a via, the materials of the capping layer and of the contact being selected whereby at the interface therebetween there is substantial absence of non-conductive compounds formed from the material of the capping layer.


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