The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Aug. 02, 1994
Yutaka Hayashi, Tsukuba, JP;
Kunihiro Takahashi, Tokyo, JP;
Hiroaki Takasu, Tokyo, JP;
Yoshikazu Kojima, Tokyo, JP;
Hitoshi Niwa, Tokyo, JP;
Nobuyoshi Matsuyama, Tokyo, JP;
Yomoyuki Yoshino, Tokyo, JP;
Masaaki Kamiya, Tokyo, JP;
Agency Industrial Science, , JP;
Seiko Instruments Inc., , JP;
Abstract
A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.