The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Jun. 02, 1995
Robert F Kwasnick, Schenectady, NY (US);
Ching-Yeu Wei, Schenectady, NY (US);
Jack D Kingsley, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250.degree. C. using tetraethoxysilane (TEOS) as the silicon source gas.