The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1996
Filed:
Dec. 23, 1994
Makio Nakamura, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A horizontally polarized wave signal is amplified in low-noise by two first LNAs connected in series to each other. The resulting low-noise amplified signal is entered into a first high electron mobility transistor mixer via a first band-pass filter. The first high electron mobility transistor mixer converts the signal into an intermediate frequency signal based on local power fed from a local oscillator via a Y-type distribution circuit and a first directional filter, and provides the converted signal as an output thereof. Meanwhile, a vertically polarized wave signal is amplified in low-noise by two second LNAs connected in series to each other. The resulting low-noise amplified signal is entered into a second high electron mobility transistor mixer via a second band-pass filter. The second high electron mobility transistor mixer converts the signal into an intermediate frequency signal based on local power fed from the local oscillator via the Y-type distribution circuit and a second directional filter, and provides the converted signal as an output thereof.