The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1996
Filed:
Aug. 04, 1995
Mitsuyoshi Nakamura, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device improved not to form a parasitic gate overlap capacitance in a drain side of an MOS transistor. A first gate electrode and a second gate electrode are provided on a semiconductor substrate. A common drain electrode is provided between first gate electrode and second gate electrode in a main surface of silicon substrate. Common drain region includes a high concentration impurity region and a pair of low concentration impurity regions. Outer edges of low concentration impurity regions are located coplanar with a side surface of gate electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile