The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1996
Filed:
Nov. 29, 1993
Joo-young Yoon, Euiwang, KR;
In-ho Nam, Suseong-gu, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
In a semiconductor memory device having a novel structure of a wiring layer and a large capacitance capacitor and the manufacturing method therefor, on the transistor formed on the semiconductor substrate, a first conductive layer is formed extending along with the gate electrode of the transistor and connecting with the gate electrode, a storage electrode of a capacitor is formed on the first conductive layer by interposing the insulation film between the first conductive layer and the source region of the transistor, and a second conductive layer is formed in connection with the first conductive layer at a portion between memory cell array and the peripheral circuit region. Storage electrodes can be made thicker without affecting to the step-difference between memory cells and the peripheral circuit region, so that a more reliable semiconductor memory device with a capacitor having a larger capacitance can be realized.