The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1996
Filed:
May. 31, 1995
Domenico Rossi, Cilavegna, IT;
Hisashi Tahara, Narashino, JP;
SGS-Thomson Microelectronics, S.r.l., Agate Brianza, IT;
Abstract
A BiCMOS capacitive charge pump circuit for low supply voltage has a bipolar part, functionally reproducing a basic charge pump circuit and a CMOS part that comprises MOS transistors functionally connected in parallel with the driving switch toward ground potential of the charge transfer capacitance and in parallel with the output diode for substantially nullifying voltage drops on the respective bipolar components. A special driving circuit (T8, R2, I2), powered at the boosted output voltage (VOUT) responds to the rise of the voltage on the output node above a minimum level, as ensured by the bipolar part of the charge pump circuit, to drive said MOS transistors (M1, M2), thus allowing the output voltage to reach a level that is substantially double the supply voltage (Vs), even when the latter is exceptionally low, for reliably ensuring switching of the CMOS part of the circuit.