The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 1996

Filed:

Feb. 07, 1995
Applicant:
Inventors:

Ashraf Uddin, Kanagawa-ken, JP;

Fumio Ueno, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
25037011 ; 250372 ;
Abstract

A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.


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