The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 1996

Filed:

Aug. 30, 1994
Applicant:
Inventors:

Shigeki Maegawa, Moriguchi, JP;

Tatsuo Yoshioka, Hirakata, JP;

Tetsuya Kawamura, Hirakata, JP;

Yutaka Miyata, Ikoma, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437907 ; 437174 ; 117904 ; 148D / ; 1566511 ;
Abstract

A thin film on a substrate is patterned so as to include an area in which a thin film transistor is to be formed and an area of another patterned thin film or a semiconductor device, and so as to have a size larger than the total size of the areas. Next, the patterned thin film is annealed. After the annealing, a part of the inside area of the patterned thin film is patterned. The part of the thin film is used for forming a thin film transistor.


Find Patent Forward Citations

Maegawa, Shigeki. (1996). Method for processing a thin film using an energy beam (U.S. Patent No. 5580801). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5580801

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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