The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Nov. 10, 1994
Applicant:
Inventor:
Mitsuhiro Kitamura, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01S / ;
U.S. Cl.
CPC ...
359344 ; 359337 ; 2502 / ; 257 14 ;
Abstract
A semiconductor optical amplifier having a large gain and a high saturation optical output power has a uniform cross-section of an active layer. In the semiconductor optical amplifier, the band gap wavelength of the active layer in the vicinity of the light-emitting end is shorter than that in the vicinity of the light-receiving end. The active layer may have a multiple quantum well structure, or the active layer may have a tesile-strained (compressively strained) multiple quantum well structure in which the absolute strain quantity in the vicinity of the light-emitting end is larger than that in the vicinity of the light-receiving end.