The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Oct. 13, 1994
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
By reverse biasing the PN junction formed around a semiconductor element, the semiconductor element is isolated from other elements. The PN junction around the semiconductor element is a junction between a layer surrounding the semiconductor element and a layer disposed outside the layer. Jointly with the layer constituting the semiconductor, the layer surrounding the semiconductor element forms a parasitic diode. The potential of the layer on the semiconductor element to be connected to the layer surrounding the semiconductor element is detected, and based on this potential, the voltage to be applied to the parasitic diode is controlled so as to be constant. When the voltage to be applied to the parasitic diode is lower than a threshold, the parasitic diode will be in a cutoff state.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile