The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
May. 01, 1995
Julio C Costa, Phoenix, AZ (US);
Wayne R Burger, Phoenix, AZ (US);
Natalino Camilleri, Tempe, AZ (US);
Christopher P Dragon, Tempe, AZ (US);
Daniel J Lamey, Phoenix, AZ (US);
David K Lovelace, Chandler, AZ (US);
David Q Ngo, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.