The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Dec. 18, 1995
Barbara Vasquez, Austin, TX (US);
Irenee M Pages, Tolosane, FR;
E James Prendergast, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A multiple output, vertical MOSFET device (11) with improved electrical performance and thermal dissipation is integrated with an additional semiconductor device or semiconductor circuit (18) on a single semiconductor substrate (34). The method of making the vertical MOSFET device (11) involves thinning the semiconductor substrate (34) after fabricating the vertical MOSFET device (11) and the semiconductor circuit (18) to reduce the vertical component of electrical and thermal resistance and to increase the thermal dissipation efficiency. Electrical performance is improved by thinning the semiconductor substrate (34) and by providing a low resistivity, patterned metal buried layer. Thermal management is enhanced by using flip chip bumps (24) to dissipate heat from a top surface (31) of the semiconductor substrate (34) and by using the patterned buried metal layer (26) to dissipate heat from a bottom surface (32) of the semiconductor substrate (34).