The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 1996

Filed:

Jul. 08, 1994
Applicant:
Inventors:

Shigeki Nakase, Hamamatsu, JP;

Shigeyuki Nakamura, Hamamatsu, JP;

Tsuyoshi Ohta, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J / ;
U.S. Cl.
CPC ...
2502 / ; 2502 / ; 327514 ; 327538 ;
Abstract

A bias circuit for applying a bias voltage to an avalanche photodiode APD2 for detecting light comprises a first diode APD1, a power supply V.sub.H connected to the first diode APD1, for applying a voltage to make the diode in breakdown between an anode and a cathode of the first diode APD1, and a constant voltage circuit V2 connected to the avalanche photodiode APD2 for detecting light, for applying a voltage difference of a breakdown voltage generated between the anode and the cathode of the first diode APD1 minus a constant voltage to the avalanche photodiode. The constant voltage is substantially independent from current flowing in the avalanche photodiode APD2 for detecting light to the avalanche photodiode.


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