The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Feb. 27, 1995
Applicant:
Inventor:
John Lin, Ellicott City, MD (US);
Assignee:
AlliedSignal Inc., Morris Township, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01R / ;
U.S. Cl.
CPC ...
437 21 ; 437157 ; 437904 ;
Abstract
A high performance lateral Silicon-On-Insulator (SOI) power device having a high breakdown voltage (.ltoreq.100 v). The SOI power device includes a silicon layer formed on an oxide layer over a silicon substrate. A mask having a single opening on the anode (drain) side of the silicon layer is formed thereon such that an impurity may be introduced into the silicon layer. The resultant dopant is implanted in the anode side and laterally diffused by high temperature annealing. The resultant device sustains breakdown voltages of up to 100 volts and enables an extremely low on-state resistance of 1.2 milliohm-cm.sup.2.