The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Dec. 30, 1994
Lucian A D'Asaro, Madison, NJ (US);
Donald W Dahringer, Glen Ridge, NJ (US);
Keith W Goossen, Aberdeen, NJ (US);
James A Walker, Howell, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of an uncured cement (e.g. epoxy) between the devices, allowing the etch-resist to solidify, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist epoxy is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.