The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Dec. 16, 1994
Thomas C Hasenberg, Agoura Hills, CA (US);
David H Chow, Newbury Park, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A mid-IR laser is provided having novel AlAs/Al.sub.x Ga.sub.1-x Sb or InAs/Al.sub.x Ga.sub.1-x Sb superlattice cladding regions. The arsenide layers of the n-type cladding region are doped n-type, utilizing silicon, and may be used with conventional active region materials, such as InAs.sub.z Sb.sub.1-z and In.sub.w Ga.sub.1-w As.sub.y Sb.sub.1-y. The novel cladding regions can be deposited without the use of Group VI elements, such as Te, which are not preferred source materials for MBE growth. Furthermore, the need for quaternary layers, such as Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, used in the prior art devices, is eliminated; consequently, the need for precise control of two Group V fluxes (As and Sb) is eliminated.