The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Jul. 01, 1994
Applicant:
Inventors:
Nader Radjy, Palo Alto, CA (US);
Lee E Cleveland, Santa Clara, CA (US);
Jian Chen, San Jose, CA (US);
Shane C Hollmer, Santa Clara, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518524 ; 36518519 ; 3651853 ;
Abstract
A method of converging threshold voltages of memory cells in a flash EEPROM array after the memory cells have been erased, the method including applying a gate voltage having an initial negative value which is increased to a more positive value in steps during application of a drain disturb voltage. By applying a gate voltage with an initial negative value, leakage current during convergence is reduced enabling all cells on bit lines of the array to be converged in parallel.