The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Apr. 25, 1995
Akira Kumagai, Yamagata, JP;
NEC Corporation, Tokyo, JP;
Abstract
An ultra-high frequency semiconductor device according to another aspect of the present invention, includes Field Effect transistor (FET) chips each of which includes FET elements and which are connected to each other by bonding wires, and an internal matching circuit having a concentrated parameter circuit and a distributed parameter circuit, and wherein the concentrated parameter circuit includes capacitor chips provided on input and output sides of the FET chips and including a plurality of chip capacitors each of which is connected to said corresponding FET elements, and wherein each of the chip capacitors has a length predetermined based on a frequency band used in practice. Each of said chip capacitors may have a length predetermined such that a resonance frequency does not exist in a frequency band used in practice or a length predetermined such that an input impedance of each of said chip capacitors is capacitive at an upper limit frequency of the frequency band.