The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Mar. 24, 1994
Avery N Goldstein, Midland, MI (US);
Starfire Electronic Development & Marketing, Ltd., Bloomfield Hills, MI (US);
Abstract
Thin films of the Group IV materials silicon and germanium are produced in the range of 2.5 to 25 nm thick from nanocrystal precursors. According to the invention a solid, continuous film of silicon or germanium is formed by depositing a contiguous layer of nanocrystals of the semi-conductor materials onto a substrate, then heating the layer to a temperature below the bulk melting temperature which is nonetheless adequate to melt the nanocrystals and form a continuous liquid thin film upon cooling. The resulting thin film may be doped or intrinsic. The lower processing temperatures make it possible to form these thin semi-conductor films with less stringent thermal requirements on the underlayers, substrates and other related structures, thus supporting applications in microelectronics, solar conversion and so forth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile