The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Oct. 18, 1994
Michio Arai, Tokyo, JP;
Masaaki Ikeda, Tokyo, JP;
Kazushi Sugiura, Tokyo, JP;
Nobuo Furukawa, Tokyo, JP;
Mitsufumi Kodama, Kanagawa, JP;
Yukio Yamauchi, Kanagawa, JP;
Naoya Sakamoto, Kanagawa, JP;
Takeshi Fukada, Kanagawa, JP;
Masaaki Hiroki, Kanagawa, JP;
Ichirou Takayama, Kanagawa, JP;
TDK Corp., Tokyo, JP;
Semiconductor Energy Laboratory Co. Ltd., Kanagawa, JP;
Abstract
An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.