The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
Jun. 07, 1995
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; B05D / ;
U.S. Cl.
CPC ...
4272552 ; 4272551 ; 427 74 ; 427578 ; 427573 ; 427574 ; 430128 ; 148D / ;
Abstract
A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.