The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1996
Filed:
Jan. 08, 1993
Satoshi Arimoto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on a first conductivity type substrate includes a superlattice semiconductor multi-layered structure disposed at least either between the active layer and the first conductivity type cladding layer or between the active layer and the second conductivity type cladding layer. The superlattice semiconductor multi-layered structure may include a multiquantum barrier and this multiquantum barrier may include a buffer layer for preventing tunneling disposed at the side of the active layer and a superlattice multi-layered film structure including plural barrier layers and plural well layers alternatingly laminated. As a result, light intensity at the laser facet is reduced, suppressing facet deterioration during high-power operation.