The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1996
Filed:
Jan. 12, 1994
Arthur J Leidich, Flemington, NJ (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A dual discharge network is shown discharging any residual charge on the gates of MOSFET's used to protect a device from over voltages. The dual discharge networks are separately responsive to a positive or negative voltage at an input terminal such as an I/O input terminal, for example. Bias to each of the discharge networks is provided by the positive or negative I/O voltage and power to the transistors within each discharge network is provided by the MOSFET gate charges. In this way, a conduction path is formed between the positively and negatively charged MOSFET gates driving the gates towards ground, driving the MOSFETs to non-conduction and isolating a protected device from a I/O over-voltage where positive or negative.