The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 1996
Filed:
May. 16, 1995
Hyunsang Hwang, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for isolating semiconductor elements, A oxynitride has an intermediate property between an oxide and a nitride, and therefore, it has an excellent selection ratio when etching the oxide and the nitride (particularly during a wet etching. The method for isolating semiconductor elements includes the steps of: (1) forming a pad oxide layer on a silicon substrate, and depositing silicon nitride; (2) carrying out a photo etching process to remove the silicon nitride layer of a field region as a region other than an active region; (3) carrying out a field oxidation process to form a field oxide layer on the field region; (4) carrying out a heat treatment under an NH.sub.3 atmosphere to form an oxynitride layer on the field oxide layer; and (5) removing the nitride layer, growing a sacrificial oxide layer, and removing the sacrificial oxide layer by applying a wet etching method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile