The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 1996

Filed:

Nov. 14, 1994
Applicant:
Inventors:

Rakesh B Sethi, Campbell, CA (US);

Cheng-Chen Hsueh, Sunnyvale, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437977 ; 148D / ; 148D / ;
Abstract

An integrated circuit based on submicron technology is disclosed herein along with the way in which it is formed. The integrated circuit is comprised of an arrangement of different substances which are combined to form its body structure and which define within the body structure an array of electronic components including a diamond thin film coated trench arrangement. In one embodiment disclosed herein, the array of electronic component includes two such components which are in close proximity to and must be electrically isolated from one another and the diamond thin film coated trench arrangement serves to electrically isolate these two components from each other. In a second embodiment, the diamond thin film coated trench is specifically designed to serve as a capacitor forming part of, for example, a DRAM, a mixed signal circuit or a neuro-fuzzy circuit.


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