The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1996
Filed:
Jan. 27, 1995
Sung-Min Yim, Pyeongtake-gun, KR;
Jung-Hyuck Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
The present invention relates to a semiconductor memory device and more particularly to a sense amplifier control circuit capable of stabilizing memory cell voltage characteristics by clamping an external power supply voltage to an internal power supply voltage. The semiconductor memory device according to the present invention has a sense amplifier operated by a given control signal and a first sense amplifier driver. A sense amplifier driver control circuit has an output line connected to a control terminal of the first sense amplifier driver for variably controlling current flowing into the first sense amplifier driver by allowing the amount of current to be increased when transmitting data from a RAM port to a SAM port. A bias circuit has an output line connected to a control terminal of a driving element of the sense amplifier driver control unit and maintains the current flowing into the driving element at a constant state regardless of an increment or decrement of an external power supply voltage. A drive circuit having an input line connected to a voltage applied to the sense amplifier and an output line connected to the input lines of the sense amplifier control circuit and the bias circuit drive the sense amplifier driver control circuit and the bias circuit.