The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1996
Filed:
Oct. 13, 1994
Applicant:
Inventor:
Ali A Iranmanesh, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257565 ; 257578 ; 257579 ; 257584 ;
Abstract
A bipolar transistor is provided in which the emitters do not traverse the base but terminate inside the top surface of the base. Each emitter is L-shaped in some embodiments. The base top surface has a polygonal or circular outer boundary. The transistor has a long emitter perimeter available for base current flow and more than two emitter sides (e.g., five sides) available for base current flow. Further, the transistor has a large ratio of the emitter area to the base area. Consequently, the transistor has low noise, high gain, high frequency range, and a small size.