The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1996
Filed:
Oct. 02, 1995
Applicant:
Inventors:
Christine Thero, Scottsdale, AZ (US);
Patricia A Norton, Mesa, AZ (US);
Assignee:
Motorola, Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566431 ; 1566571 ; 15665911 ; 15666111 ; 216 41 ; 216 67 ; 216 79 ;
Abstract
A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch.
Thero, Christine. (1996). Method of etching silicon carbide (U.S. Patent No. 5571374). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5571374
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile