The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1996
Filed:
Feb. 10, 1995
Bret Halpern, Bethany, CT (US);
Jet Process Corporation, New Haven, CT (US);
Abstract
A gas jet film deposition system includes a source of thermionically emitted electrons which are accelerated through carrier gas and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible. The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile