The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 1996

Filed:

Aug. 31, 1994
Applicant:
Inventors:

Eiichi Makino, Yokohama, JP;

Masaru Koyanagi, Yokohama, JP;

Kazuyoshi Muraoka, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; G11C / ;
U.S. Cl.
CPC ...
327 80 ; 327 68 ; 327530 ; 36518909 ;
Abstract

A semiconductor integrated circuit includes memory cell blocks having memory cells arranged in matrix, sense amplifiers, each located adjacent to the memory cells, and sense amplifier control circuits, each of the sense amplifier control circuit being located on outside of the memory cell block. The sense amplifier control circuit has a standard voltage generating circuit and a control circuit for receiving the standard voltage and for transferring a driver signal to the sense amplifier to control the charging ability of the sense amplifier. The source voltage has three voltage regions, first, intermediate, and second regions. In the first voltage region, the potential of the driver signal increases with the increase of the source voltage. In the intermediate voltage region (2.7 to 3 Volt), the potential of the driver signal is changed oppose to the change of the source voltage, and in the second voltage region, the potential of the driver signal decreases with the increase of the source voltage.


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