The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1996
Filed:
Sep. 27, 1995
Kousaku Yano, Osaka, JP;
Tomoyasu Murakami, Osaka, JP;
Masayuki Endo, Osaka, JP;
Noboru Nomura, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.