The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1996
Filed:
Feb. 28, 1995
Jae-sung Roh, Kyunggi-do, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A method for forming a capacitor of a memory cell is disclosed. Steps of the present invention may include: forming a first conductive layer on a substrate; forming a tantalum oxide layer on the first conductive layer; forming a silicon nitride layer on the tantalum oxide layer; carrying out a titanium ion implantation into the tantalum oxide layer; carrying out a heat treatment, which may form a silicon oxide layer between the first conductive layer and the tantalum oxide layer, and which may include titanium oxide in the tantalum oxide layer, and which may change the silicon nitride to an oxynitride layer; and forming a second conductive layer on the oxynitride layer. During the titanium ion implantation process, Ti(OCH.sub.3).sub.4 may be used as a titanium ion source. The titanium ion implantation process may be carried out using the Si.sub.3 N.sub.4 layer as a buffer layer, and with an energy of about 5 KeV-15 KeV, and a dosage of about 10.sup.13 -10.sup.16.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile