The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1996
Filed:
Dec. 21, 1995
Applicant:
Inventors:
Tangshiun Yeh, St. Paul, MN (US);
Allan T Hurst, Anoka, MN (US);
Huang-Joung Chen, Eagan, MN (US);
Lonny L Berg, Elk River, MN (US);
William F Witcraft, Minneapolis, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 48 ; 437 52 ; 437245 ;
Abstract
In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges.
Yeh, Tangshiun. (1996). Method of making integrated spacer for magnetoresistive ram (U.S. Patent No. 5569617). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5569617
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile