The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1996
Filed:
Jan. 23, 1995
Applicant:
Inventors:
Michael W DeVre, Scotia, NY (US);
Steven M Gasworth, Glenville, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ; H05H / ;
U.S. Cl.
CPC ...
427 81 ; 427 79 ; 427577 ; 427578 ; 427580 ; 4272557 ; 437919 ; 20419222 ;
Abstract
Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.
DeVre, Michael. (1996). Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon (U.S. Patent No. 5569487). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5569487
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile