The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Aug. 10, 1995
Misao Hironaka, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes resonator facets formed by cleaving; a first conductivity type semiconductor region; a semiconductor multilayer structure disposed on the first conductivity type semiconductor region and including at least an active layer and upper and lower cladding layers sandwiching the active layer, the semiconductor multilayer structure functioning as a laser; first and second electrodes for supplying current to the semiconductor multilayer structure to generate light in that structure; a second conductivity type semiconductor region disposed in the vicinity of the semiconductor multilayer structure so that the light generated in the semiconductor multilayer structure is directly applied to the second conductivity type region, the second conductivity type region contacting the first conductivity type semiconductor region to produce a pn junction; and a third electrode electrically contacting the second conductivity type region for outputting signals when a voltage is applied across the third electrode and one of the first and second electrodes. Since the light-responsive region, i.e., the pn junction, is included in the laser device, an external photodetector is dispensed with, so the cost of the laser device is significantly reduced.