The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Nov. 16, 1995
Cheol-Seong Hwang, Seongnam, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A capacitor in a semiconductor device and a manufacturing method for the capacitor are provided using a triple film including a Ti layer, a TiN layer, and a Ta layer. The capacitor has a first insulating film formed on the surface of a semiconductor substrate, the first insulating film having a center hole and at least one step between the center hole and the rest of the first insulating film, a spacer formed on the inner wall of the contact hole, a first conductive layer filling the contact hole, a triple film formed on the center of the first insulating film, a second conductive layer formed on the triple film, a second insulating film formed on the resultant structure, and a third conductive layer formed on the second insulating film. The Ta layer is placed in between the second conductive layer and both the Ti layer and the TiN layer to prevent the production of a metal oxide and nitrogen gas from a reaction between oxygen and the Ti and TiN layers.