The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Aug. 04, 1995
Arthur Paolella, Howell, NJ (US);
Bahram Nabet, Philadelphia, PA (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
An FET or MESFET having a semiconductor optically transparent gate. A substrate having a doped channel placed thereon together with a source and a drain with a semiconductor gate formed therebetween may be manufactured using conventional semiconductor manufacturing techniques. The optically transparent highly doped semiconductor gate forms an n+-n junction with the n-type doped channel. This junction is modulated or changed by an optical signal causing a photovoltaic effect that reduces the barrier potential at the n+-n junction resulting in a depletion of the accumulation region. This results in increased flow of current in the doped channel. The transparent highly doped semiconductor gate increases performance of the FET or MESFET optical detector. This is an improvement over conventional metal semiconductor field-effect transistor (MESFET) technology, and can be applied to microwave monolithic integrated circuits (MMIC).