The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
May. 03, 1995
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A pn diode as an electrostatic discharge protection element of a MOSFET in a semiconductor device having an SOI structure to enable large current to flow is disclosed. N.sup.+ layers and p.sup.+ layers are formed on a surface of an element-isolation region isolated from another element region by dielectrics, and a polycrystalline silicon layer is formed by burying under these. Accordingly, the n.sup.+ layer and p.sup.+ layer and the n.sup.+ layer and p.sup.+ layer are respectively connected electrically via the polycrystalline silicon layer, structuring pn diodes. Consequently, the respective pn diodes become vertical pn junctions and it becomes possible to allow large current flow. Additionally, a MOSFET is formed on the dielectric in another element region, and a pn diode functions as an electrostatic discharge protection element of this MOSFET.